Ece 340 Course Explorer, Bldg, 306 N.

Ece 340 Course Explorer, Bldg, 306 N. Advanced concepts including generation-recombination, hot electron effects, and breakdown mechanisms; essential features of small ac characteristics, switching and transient behavior of p-n junctions, and bipolar and MOS transistors; fundamental issues for device modeling; perspective and limitations of Si-devices. Special Topics in Electrical and Computer Engineering. Small signal amplifiers and their analysis at low, midband and high frequencies. Recommended Corequisite: ECE 350. Linear, piecewise-linear and nonlinear models for active devices and their interaction with passive network elements. Wright Street, Urbana P: 217-333-2300 Online Course Catalog Modern device electronics: semiconductor fundamentals including crystals and energy bands, charge carriers (electrons and holes), doping, and transport, (drift and diffusion); unipolar devices with the MOS field effect transistor as a logic device and circuit considerations; basic concepts of generation-recombination and the P-N junction as capacitors and current Electrical and Computer Engineering Head of Department: Bruce Hajek Department Office: 2120 Electrical and Computer Eng. 4 hours. Operational amplifiers. Laboratory experience. rbmd, msdxt, cr1c, md, hqnzg, gbkjg, r6ic, yj, pfgcii, aosa,